DIFFERENT ROLES AND DESIGNS OF HETERO-GATE DIELECTRIC IN SINGLE- AND DOUBLE-GATE TUNNEL FIELD-EFFECT TRANSISTORS
نویسندگان
چکیده
منابع مشابه
Linearity of Hetero-Gate-Dielectric Tunneling Field-Effect Transistors
Linearity characteristics of hetero-gatedielectric tunneling field-effect transistors (HG TFETs) have been compared with those of high-k-only and SiO2-only TFETs in terms of IIP3 and P1dB. It has been observed that the optimized HG TFETs have higher IIP3 and P1dB than high-k-only and SiO2-only TFETs. It is because HG TFETs show higher transconductance (gm) and current drivability than SiO2-only...
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ژورنال
عنوان ژورنال: Tạp chí Khoa học Đại học Đà Lạt
سال: 2020
ISSN: 0866-787X,0866-787X
DOI: 10.37569/dalatuniversity.10.3.745(2020)